에칭제 및 회로 기판의 제조 방법

• Main Authors: NAKANE DAI, AKIYAMA DAISAKU, NISHIE KENJI, FUKUI YU
• Format: Patent
• Language: Korean
• Published: 10.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

본 발명은, 구리보다 귀한 금속을 포함하는 귀금속층과 구리층이 공존하는 피처리물의 구리층을 선택적으로 에칭하는 에칭제로서, 구리 이온과, 고리 내에 질소 원자를 2 개 이상 갖는 복소 고리형 화합물 및 탄소수가 8 이하인 아미노기 함유 화합물로 이루어지는 군에서 선택되는 1 종 이상의 질소 함유 화합물과, 폴리알킬렌글리콜과, 할로겐 이온을 포함하고, 폴리알킬렌글리콜을 0.0005 중량％ 이상 7 중량％ 이하 포함하고, 할로겐 이온을 1 ppm 이상 250 ppm 이하 포함하는 에칭제 등이다. The present invention includes an etching agent that selectively etches a copper layer of a processing target in which a noble metal layer containing a metal nobler than copper and the copper layer coexist, the etching agent including: a copper ion; one or more nitrogen-containing compounds selected from the group consisting of a heterocyclic compound having two or more nitrogen atoms in a ring and an amino group-containing compound having 8 or less carbon atoms; a polyalkylene glycol; and a halogen ion, in which the polyalkylene glycol is contained in an amount of 0.0005% by weight or more and 7% by weight or less, and the halogen ion is contained in an amount of 1 ppm or more and 250 ppm or less.