Method of manufacturing integrated circuit device using carbonyl compound

A structure is formed to manufacture an integrated circuit element, wherein a first material film including silicon atoms and nitrogen atoms and a second material film not including nitrogen atoms are exposed are exposed on a substrate in the structure. By applying a carbonyl compound having a funct...

Full description

Saved in:
Bibliographic Details
Main Authors NGUYEN THANH CUONG, HAN HOON, KIM DAE KEON, CHO YOUN JOUNG, CHOI JI YU, UCHIUZOU HIROYUKI, YOSHINO TOMOHARU, KO EUN HYEA, MURATA KIYOSHI, LEE SO YOUNG, HWANG BYUNG KEUN
Format Patent
LanguageEnglish
Korean
Published 07.07.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A structure is formed to manufacture an integrated circuit element, wherein a first material film including silicon atoms and nitrogen atoms and a second material film not including nitrogen atoms are exposed are exposed on a substrate in the structure. By applying a carbonyl compound having a functional group without alpha hydrogen (α-hydrogen) to the structure, an inhibitor liner is selectively formed only on an exposed surface of the first material film between the first material film and the second material film. 집적회로 소자를 제조하기 위하여, 기판 상에 실리콘 원자들 및 질소 원자들을 포함하는 제1 물질막과, 질소 원자를 포함하지 않는 제2 물질막이 노출된 구조물을 형성한다. 알파 수소(α-hydrogen)가 존재하지 않는 작용기를 가지는 카르보닐 화합물을 상기 구조물에 인가하여, 상기 제1 물질막 및 상기 제2 물질막 중 상기 제1 물질막의 노출 표면 위에만 선택적으로 인히비터 라이너를 형성한다.
Bibliography:Application Number: KR20220152841