Method of processing interior part of substrate processing apparatus

• Main Authors: LEE DAE HUN, SHIN CHANG HAK
• Format: Patent
• Language: English; Korean
• Published: 22.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a method for processing an interior part of a substrate processing apparatus. According to an embodiment of the present invention, the method for processing an interior part of a substrate processing apparatus can improve process reliability by preventing a particle from adhering to the rear surface of a substrate by effectively reducing the particle in an interior part of a substrate processing apparatus. According to an aspect of the present invention, the substrate processing apparatus includes: a processing chamber limiting a reaction space therein; a substrate support unit connected to the processing chamber to support the substrate in the reaction space; a gas spray unit installed to be opposite to the substrate support unit to spray processing gas to the reaction space; and a plasma power unit for supplying electricity to the gas spray unit to form a plasma atmosphere in the reaction space. The method for processing an interior part of a substrate processing apparatus includes: a step of cleaning the inside of the processing chamber; a step of forming a seasoning layer in the processing chamber; and a step of performing helium plasma treatment on the interior part of the processing chamber including the substrate support unit to reduce at least particles remaining on the substrate support unit. 본 발명의 일 관점에 따른 기판 처리 장치의 내부재 처리 방법은, 내부에 반응 공간을 한정하는 공정 챔버, 상기 반응 공간 내에서 기판을 지지하기 위해서 상기 공정 챔버에 결합되는 기판 지지부, 상기 반응 공간으로 공정 가스를 분사하기 위해서 상기 기판 지지부에 대향되게 설치된 가스 분사부 및 상기 반응 공간에 플라즈마 분위기를 형성하도록 상기 가스 분사부에 전력을 공급하기 위한 플라즈마 전원부를 포함하는 기판 처리 장치의 내부재 처리 방법으로서, 상기 공정 챔버의 내부를 세정하는 단계와, 상기 공정 챔버의 내부에 시즈닝층을 형성하는 단계와, 적어도 상기 기판 지지부 상에 잔류하는 입자들을 감소시키기 위해서, 상기 기판 지지부를 포함하는 상기 공정 챔버의 내부재를 헬륨 플라즈마 처리하는 단계를 포함한다.