금속막의 ALD 장치

• Main Authors: SAKAMOTO HITOSHI, SATO EIJI
• Format: Patent
• Language: Korean
• Published: 02.06.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

ALD 장치(10A, 10B)는 처리 가스원(30, 31)과 연결되어 반응 용기(20)에 공급되는 제1 전구체를 생성하는 제1 전구체 생성부(50A, 50B)와, 환원 가스원과 상기 반응 용기에 연결되어 반응 용기에 공급되는 제2 전구체를 생성하는 제2 전구체 생성부(60)를 가진다. 제1 전구체 생성부는 제1 플라즈마 생성 수단(52)에 의해 여기되는 제1 플라즈마(P1)에 의해 타깃(53)을 에칭하여 금속 성분을 포함하는 화합물 가스를 제1 전구체로서 공급한다. 제2 전구체 생성부는 제2 플라즈마 생성 수단(64)에 의해 여기되는 제2 플라즈마(P2) 중의 환원 가스 성분의 라디칼을 제2 전구체로서 공급한다. An ALD device (10A, 10B) includes a first precursor generator (50A, 50B) that is connected to a processing gas source (30, 31) and generates a first precursor to be supplied to a reactor vessel (20), and a second precursor generator (60) that is connected to a reducing gas source (30, 32) and the reactor vessel and generates a second precursor to be supplied to the reactor vessel. The first precursor generator etches a target (53) by a first plasma (P1) excited by a first plasma generating means (53) and supplies a compound gas containing a metallic component as the first precursor. The second precursor generator supplies radicals of a reducing gas component in a second plasma (P2) excited by a second plasma generating means (64) as the second precursor.