THIN FILM QUALITY ENHANCER METHOD FOR FORMING THIN FILM USING THE SAME SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE PREPARED THEREFROM

• Main Authors: YEON CHANG BONG, JUNG JAE SUN, LEE SEUNG HYUN
• Format: Patent
• Language: English; Korean
• Published: 01.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a film quality improvement agent, a method of forming a thin film using the same, and a semiconductor substrate and semiconductor device manufactured therefrom. By providing compounds of a certain structure as membrane quality improvers, a shielding area for molybdenum-based thin films is formed on a substrate to reduce a deposition rate of molybdenum-based thin films. By controlling a thin film growth rate, a compound that is solid at room temperature is used on the substrate with a complex structure so that step coverage and thickness uniformity of the thin film can be greatly improved even when forming the thin film. Since corrosion and deterioration are reduced and the crystallinity of the thin film is improved, electrical properties of the thin film can be improved. The molybdenum-based thin film includes molybdenum metal, molybdenum oxide, or molybdenum nitride on a substrate. 본 발명은 막질 개선제, 이를 이용한 박막 형성 방법, 이로부터 제조된 반도체 기판 및 반도체 소자에 관한 것으로, 소정 구조의 화합물을 막질 개선제로 제공하며, 기판에 몰리브덴계 박막용 차폐 영역을 형성하여 몰리브덴계 박막의 증착 속도를 저감시키고 박막 성장률을 제어하여 복잡한 구조를 갖는 기판위에 상온에서 고체인 화합물을 사용하여 박막을 형성하는 경우에도 단차 피복성(step coverage) 및 박막의 두께 균일성을 크게 향상시킬 수 있고, 부식이나 열화가 저감되며 박막의 결정성이 향상되어 박막의 전기적 특성이 개선되는 효과가 있다.