LARGE-AREA HIGH-PERFORMANCE SEMICONDUCTOR DEVICE MANUFACTURING METHOD THROUGH SOLUTION PROCESS

• Main Authors: KANG JOO HOON, KIM JI HYUN
• Format: Patent
• Language: English; Korean
• Published: 01.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

One embodiment of the present invention provides a method for manufacturing a large-area semiconductor device using a solution process. According to an embodiment of the present invention, a method of manufacturing a semiconductor device using a two-dimensional material can reduce processing costs and has the effect of providing a manufacturing method capable of manufacturing a large-area semiconductor device. The method includes the steps of: forming a first coating layer; forming an insulating layer; forming a semiconductor layer; and patterning an electrode. 본 발명의 일실시예는 용액공정을 이용한 대면적 반도체소자의 제조방법을 제공한다. 상기 본 발명의 일 실시예에 따라, 2차원 물질을 이용한 반도체소자의 제조방법에 있어서, 공정비용이 저감될 수 있으며, 대면적 반도체소자의 제조가 가능한 제조방법을 제공하는 효과를 가진다.