PRODUCTION AND USE OF DYNAMIC STATE CHARTS WHEN GROWING A SINGLE CRYSTAL SILICON INGOT

• Main Authors: ZARDONI MARCO, HARINGER STEPHAN, AGOSTINI GIORGIO
• Format: Patent
• Language: English; Korean
• Published: 23.05.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

단결정 실리콘 잉곳을 성장시키는 방법들이 개시된다. 복수의 잉곳 성장 파라미터들을 모니터링하는 동적 상태 차트가 생성되어 단결정 실리콘 잉곳들의 생산 동안 사용될 수 있다. 일부 실시형태들에서, 동적 상태 차트는 각각의 섹터가 잉곳 성장 파라미터를 모니터링하는 복수의 섹터들을 갖는 동적 원형 맵 차트이다. Methods for growing a single crystal silicon ingot are disclosed. A dynamic state chart that monitors a plurality of ingot growth parameters may be produced and used during production of single crystal silicon ingots. In some embodiments, the dynamic state chart is a dynamic circle map chart having a plurality of sectors with each sector monitoring an ingot growth parameter.