SILICON WAFER AND EPITAXIAL SILICON WAFER

Provided is a silicon wafer in which a dopant is phosphorus, resistivity is 0.5 mΩ·cm to 1.2 mΩ·cm, and a carbon concentration is 3.0 × 10^16 atoms/cm^3 or more. The carbon concentration is reduced by 10% or more near a surface of the silicon wafer compared to a depth at the center of the silicon wa...

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Bibliographic Details
Main Authors NONAKA NAOYA, KOGA KOHTAROH, NARUSHIMA YASUHITO, HOURAI MASATAKA, ONO TOSHIAKI
Format Patent
LanguageEnglish
Korean
Published 11.05.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Provided is a silicon wafer in which a dopant is phosphorus, resistivity is 0.5 mΩ·cm to 1.2 mΩ·cm, and a carbon concentration is 3.0 × 10^16 atoms/cm^3 or more. The carbon concentration is reduced by 10% or more near a surface of the silicon wafer compared to a depth at the center of the silicon wafer. 도펀트가 인이고, 비저항이 0.5mΩ·cm 내지 1.2mΩ·cm이고, 탄소 농도가 3.0 × 1016atoms/cm3 이상인 실리콘 웨이퍼가 제공된다. 탄소 농도는 실리콘 웨이퍼의 중심 깊이에 비해 실리콘 웨이퍼의 표면 부근에서 10% 이상 감소된다.
Bibliography:Application Number: KR20220144498