NAGATIVE TRANSCONDUCTANCE DEVICE AND MULTI-VALUED MEMORY DEVICE USING THEREOF

The present invention discloses a nagative transconductance device and a multi-valued memory device using the same. The negative transconductance includes: an integrally formed WSe_2 semiconductor thin film; a first doping layer disposed on the WSe_2 semiconductor thin film and supplying electrons;...

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Bibliographic Details
Main Authors JU JAE HYEOK, CHOI HAE JU, YOO HYUN HO, LEE SUNG JOO, SON HYEON JE, KANG CHAN WOO, BAEK SUNG PYO, KANG TAE HO
Format Patent
LanguageEnglish
Korean
Published 08.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention discloses a nagative transconductance device and a multi-valued memory device using the same. The negative transconductance includes: an integrally formed WSe_2 semiconductor thin film; a first doping layer disposed on the WSe_2 semiconductor thin film and supplying electrons; a second doped layer disposed on the WSe_2 semiconductor thin film spaced apart from a first region and supplying holes; and first to third electrodes electrically connected to the WSe_2 semiconductor thin film. Therefore, it is possible to provide a negative transconductance device with double negative transconductance characteristics. 본 발명은 부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 메모리 소자를 개시한다. 상기 부성 트랜스컨덕턴스는 일체로 형성된 WSe2 반도체 박막, 상기 WSe2 반도체 박막의 상에 배치되고, 전자를 공급하는 제1 도핑층, 상기 제1 영역과 이격된 상기 WSe2 반도체 박막의 상에 배치되고, 정공을 공급하는 제2 도핑층, 상기 WSe2 반도체 박막에 전기적으로 연결된 제1 내지 제3 전극을 포함한다.
Bibliography:Application Number: KR20210145161