Substrate Processing Method

• Main Authors: KIM KA RAM, SO JAE WUK
• Format: Patent
• Language: English; Korean
• Published: 25.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a substrate processing method, which includes: a step of preparing a substrate in a chamber; a step of spraying a niobium (Nb)-containing gas on the substrate; a thin film forming step of forming a thin film containing niobium and oxygen on the substrate by spraying an oxygen-containing gas on the substrate; and a thin film etching step of etching the thin film by spraying a hydrogen-containing gas and a chlorine-containing gas which does not contain fluorine on the substrate. 본 발명은 챔버 내에 기판을 준비하는 단계; 상기 기판 상에 니오븀(Nb) 함유 가스를 분사하는 단계; 상기 기판 상에 산소 함유 가스를 분사하여 상기 기판 상에 니오븀과 산소를 포함한 박막을 형성하는 박막 형성 단계; 및 상기 기판 상에 수소 함유 가스 및 불소를 포함하지 않는 염소 함유 가스를 분사하여 상기 박막을 식각하는 박막 식각 단계를 포함하는 기판 처리 방법을 제공한다.