프리-에칭 보호 층을 증착하는 방법

• Main Authors: WANG HENG, FARR JON C, REN RUIZHE, YANG JIAO, GRANADOS ALFREDO, WANG ZHIGANG
• Format: Patent
• Language: Korean
• Published: 17.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

순환 에칭 방법은 (A) 마스크(104) 개구(108)를 통해 기판(100)을 순환적으로 에칭하기 전에, 마스크(104), 마스크 개구(108)를 정의하는, 마스크(104)의 측벽들(116), 및 마스크 개구(108)를 통해 노출된 기판(100)의 노출된 부분 위에 프리-에칭(pre-etch) 보호 층(120)을 컨포멀하게 증착하는 단계 - 프리-에칭 보호 층(120)은 제1 두께로 증착됨 -; 및 (B) (i) 마스크(104)의 개구(108) 내에 보호 층(132)을 증착하고 - 보호 층(132)은 제1 두께의 절반보다 더 작은 제2 두께로 증착됨 -; (ⅱ) 기판(100) 상에 배치된 보호 층(132)의 일부를 통해 에칭하고, 기판(100)을 에칭하며; (ⅲ) 종료점에 도달할 때까지 (i) 및 (ⅱ)를 반복함으로써, 기판(100)을 순환적으로 에칭하는 단계를 포함한다. A method of cyclic etching, comprising: (A) depositing, prior to cyclically etching a substrate through a mask opening, a pre-etch protection layer conformally over the mask, sidewalls of the mask defining the mask opening; and an exposed portion of the substrate exposed through the mask opening, the pre-etch protection layer deposited to a first thickness; and (B) cyclically etching the substrate by: (i) depositing a protection layer in the opening of the mask, the protection layer deposited to a second thickness that is less than half of the first thickness; (ii) etching through a portion of the protection layer disposed on the substrate and etching the substrate; and (iii) repeating (i) and (ii) until an end point is reached.