EUV Method for optical simulation of nano thin film for extreme ultraviolet EUV exposure and apparatus therefor

An optical simulation method of the present invention includes the steps of: inputting the elements, stoichiometry, gram density, and desired structure related to the nano thin film material; detecting physical property information from a physical property database; calculating the refractive index...

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Bibliographic Details
Main Authors HYEONGKEUN KIM, SEONG KI HUN, HYUN MI KIM
Format Patent
LanguageEnglish
Korean
Published 13.04.2023
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS
PHYSICS
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Summary:An optical simulation method of the present invention includes the steps of: inputting the elements, stoichiometry, gram density, and desired structure related to the nano thin film material; detecting physical property information from a physical property database; calculating the refractive index based on the detected physical property information; and calculating the transmittance and reflectance for the nano thin film material structure input by a user based on the calculated refractive index. 본 발명의 광학 시뮬레이션 방법은 나노박막 소재와 관련된 물질(elements), 화학 양론(stoichiometry), 밀도(gram density) 및 구조(desired structure)를 입력하는 단계와, 물성데이터베이스에서 물성 정보를 검출하는 단계와, 검출된 물성 정보를 기초로 굴절률을 산출하는 단계와, 산출된 굴절률을 기초로 사용자가 입력한 나노박막 물질 구조에 대한 투과율 및 반사율을 산출하는 단계를 포함한다.
Bibliography:Application Number: KR20230046176