5 GROUP 5 METAL COMPOUNDS PRECURSOR COMPOSITIONS INCLUDING THE SAME AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME

• Main Authors: KIM HYO SUK, PARK JUNG WOO, SEOK JANG HYEON
• Format: Patent
• Language: English; Korean
• Published: 12.04.2023
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a compound that can be deposited into a thin film through vapor deposition, and specifically, to a group 5 metal compound which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability, a precursor containing the same, and a method of forming a thin film using the same. The compound is represented by chemical formula 1, and in the chemical formula 1, M is Ta or Nb and R1 to R3 are each independently hydrogen; and a linear or branched alkyl group having 1 to 6 carbon atoms. 본 발명은 기상 증착을 통하여 박막 증착할 수 있는 화합물에 관한 것으로서, 구체적으로는 원자층 증착법(Atomic Layer Deposition, ALD) 또는 화학 기상 증착법(Chemical Vapor Deposition, CVD)에 적용가능하고 열적 안정성 이 우수한 5족 금속 화합물, 이를 포함하는 전구체 및 이를 이용하여 박막을 형성하는 방법에 관한 것이다.