기판 웨이퍼 상에 에피택셜층을 퇴적하기 위한 방법

• Main Authors: STETTNER THOMAS, WENGBAUER MARTIN
• Format: Patent
• Language: Korean
• Published: 04.04.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

본 발명은 기상으로부터 기판 웨이퍼 상에 에피택셜층을 퇴적하기 위한 방법에 관한 것이며, 방법은, 에지 위치들에 기초하여 기판 웨이퍼의 에지에 두께 특성값을 할당하는, 기판 웨이퍼의 에지 기하구조를 측정하는 단계; 에피택셜층을 퇴적하기 위한 장치의 서셉터의 포켓 내에 기판 웨이퍼를 배치하는 단계 - 포켓은 원형 둘레를 갖는 경계부에 의해 둘러싸임 - ; 기판 웨이퍼를 가열하는 단계; 및 기판 웨이퍼 위에 프로세스 가스를 통과시키는 단계를 포함하고, 기판 웨이퍼가 포켓의 경계부까지 갖는 거리가 더 얇은 에지의 두께 특성값을 갖는 에지 위치들에서보다 더 두꺼운 에지의 두께 특성값을 갖는 에지 위치들에서 작도록 포켓 내에 기판 웨이퍼가 배치되는 것을 특징으로 한다. An epitaxial layer is deposited on a substrate wafer by a method including measuring an edge geometry of the wafer, placing the wafer at a position in a pocket of a susceptor of a device for depositing the layer based on the edge geometry, heating the wafer, and passing a process gas over the wafer. Thickness characteristic values are assigned to edge portions based on the edge geometry. The position in the pocket is determined as function of an expected change in the thickness characteristic value to an eccentricity E, which is determined by prior testing of the device. The function is a result of the shape of the pocket which has a boundary having a circular circumference. The distance from the wafer to the boundary of the pocket is less at thicker edge portions and greater at thinner edge portion so the layer has thicknesses inverse to the wafer thicknesses.