저저항 게이트 산화물 금속화 라이너

• Main Authors: CHANDRASHEKAR ANAND, SAWANT GOUBERT STEPHANIE NOELLE SANDRA, GAO JUWEN, PAN YU, SCHLOSS LAWRENCE
• Format: Patent
• Language: Korean
• Published: 31.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

저 저항 (Low Resistance) 게이트 옥사이드 금속화 라이너 텅스텐 나이트라이드 배리어 층들을 사용하여 저 저항률 텅스텐을 형성하기 위한 방법들 및 장치들이 본 명세서에 제공된다. 방법들은 텅스텐 핵 생성 층 및 벌크 텅스텐 층을 증착하기 전에 매우 박형인 텅스텐 나이트라이드 배리어 층들을 증착하는 것을 수반한다. 방법들은 DRAM 및 로직 제조의 텅스텐-함유 컴포넌트들을 제조할뿐만 아니라 3D NAND 제조에서 텅스텐 워드라인들 (word lines) 을 제조하기 위해 적용 가능하다. 장치는 반도체 기판들을 프로세싱하기 위해 프로세싱 챔버의 샤워헤드에 매우 근접한 가스들을 가압하기 위해 복수의 충전 볼륨들을 갖는 프로세싱 스테이션들을 포함한다. Methods and apparatuses for forming low resistivity tungsten using tungsten nitride barrier layers are provided herein. Methods involve depositing extremely thin tungsten nitride barrier layers prior to depositing tungsten nucleation and bulk tungsten layers. Methods are applicable for fabricating tungsten word lines in 3D NAND fabrication as well as for fabricating tungsten-containing components of DRAM and logic fabrication. Apparatus included processing stations with multiple charge volumes to pressurize gases in close vicinity to a showerhead of a processing chamber for processing semiconductor substrates.