CHEMICAL LIQUID AND PROCESSING METHOD

Provided are a chemical liquid having an excellent etching ability of an Al oxide, an excellent inhibition of an Ga oxide, and an excellent etching selectivity of the Al oxide with respect to the Ga oxide; and a treatment method using the chemical liquid. The chemical liquid comprising: phosphoric a...

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Bibliographic Details
Main Authors SHIGENOI YUTA, MIZUTANI ATSUSHI
Format Patent
LanguageEnglish
Korean
Published 31.03.2023
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Summary:Provided are a chemical liquid having an excellent etching ability of an Al oxide, an excellent inhibition of an Ga oxide, and an excellent etching selectivity of the Al oxide with respect to the Ga oxide; and a treatment method using the chemical liquid. The chemical liquid comprising: phosphoric acid or a salt thereof; a non-protonic polar solvent; water, and a compound having a carboxyl group and having no hydroxyl group or a salt thereof, wherein a content of the phosphoric acid or the salt thereof is 5.0 mass% or less with respect to a total mass of the chemical liquid, a content of the non-protonic polar solvent is 50.0 mass% or more with respect to the total mass of the chemical liquid, and a content of water is 2.0 mass% or more and less than 50.0 mass% with respect to the total mass of the chemical liquid. Al 산화물의 에칭능이 우수하고, Ga 산화물의 에칭능의 억제성이 우수하며, Ga 산화물에 대한 Al 산화물의 에칭 선택성도 우수한 약액 및 상기 약액을 이용한 처리 방법의 제공. 인산 또는 그 염과, 비프로톤성 극성 용매와, 물과, 카복시기를 갖고, 수산기를 갖지 않는 화합물 또는 그 염을 포함하는, 약액으로서, 인산 또는 그 염의 함유량이, 약액의 전체 질량에 대하여, 5.0질량% 이하이며, 비프로톤성 극성 용매의 함유량이, 약액의 전체 질량에 대하여, 50.0질량% 이상이고, 물의 함유량이, 약액의 전체 질량에 대하여, 2.0질량% 이상 50.0질량% 미만인, 약액.
Bibliography:Application Number: KR20220109692