Composition for Etching Copper-Containing Metal Layer

• Main Authors: LEE EUN WON, CHOI YONG SUK
• Format: Patent
• Language: English; Korean
• Published: 31.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The present invention provides an etching composition for a copper-based metal film, including hydrogen peroxide, a fluorine-containing compound, an azole compound, a water-soluble compound having a nitrogen atom and a carboxyl group, a phosphate compound and a sulfate compound, wherein the phosphate compound and the sulfate compound are ammonium salts of phosphoric acid and sulfuric acid, respectively, and a Y value defined by Equation 1 is less than 16. The etching composition according to the present invention can etch a copper-based film, a molybdenum alloy film, and a silicon film at once with excellent etching characteristics without generating precipitates. 본 발명은 과산화수소, 함불소 화합물, 아졸 화합물, 질소 원자 및 카르복실기를 갖는 수용성 화합물, 인산염 화합물 및 황산염 화합물을 포함하며, 상기 인산염 화합물 및 황산염 화합물이 각각 인산 및 황산의 암모늄염이고, 특정 수학식 1로 정의되는 Y 값이 16 미만인 구리계 금속막용 식각 조성물을 제공한다. 본 발명에 따른 식각 조성물은 석출물이 발생하지 않으면서 우수한 식각 특성으로 구리계막, 몰리브덴합금막 및 실리콘막의 일괄 식각이 가능하다.