RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

• Main Authors: CHUN MINKI, KWON SOONHYUNG, BAE SHINHYO, KIM SEONGJIN, CHO AHRA, BAEK JAEYEOL, PARK HYEON, KIM MINSOO, JIN HWAYOUNG, NAMGUNG RAN, CHOI YOOJEONG, SONG DAESEOK
• Format: Patent
• Language: English; Korean
• Published: 16.03.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

The present invention relates to a resist topcoat composition comprising an acrylic copolymer comprising a first structural unit represented by chemical formula M-1 and a second structural unit represented by chemical formula M-2; an acidic compound; and a solvent, and a pattern forming method using the resist topcoat composition. Details of the chemical formulas M-1 and M-2 are as described in the specification. The resist topcoat composition of the present invention can implement a high-resolution pattern and improve the yield by removing single line open (SLO) defects. 화학식 M-1로 표시되는 제1 구조 단위, 및 화학식 M-2로 표시되는 제2 구조 단위를 포함하는 아크릴계 공중합체; 산성 화합물; 그리고 용매를 포함하는 레지스트 상층막용 조성물과 상기 레지스트 상층막용 조성물을 이용하는 패턴형성방법에 관한 것이다. 상기 화학식 M-1 및 화학식 M-2에 대한 상세 내용은 명세서에 기재한 바와 같다.