RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

• Main Authors: NAKAMURA TSUYOSHI, TANNO KAZUISHI, LEE JUNYEOB
• Format: Patent
• Language: English; Korean
• Published: 07.03.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

A resist composition contains: a base material component (A) of which the resolvability with respect to a photographic developer changes by the action of an acid; and an acid generator component (B) which generates an acid upon exposure to light. The base material component (A) contains a polymer having a structural unit represented by formula (1), and the acid generator component (B) is represented by PAG(C). [In formula (1): R_x represents a hydrogen atom, an alkyl group having 1-5 carbon atoms or a halogenated alkyl group having 1-5 carbon atoms; Z represents a single bond or an alkyl group having 1-5 carbon atoms; and C_p represents [image] (R_2 represents a tertiary alkyl group, n is a positive integer, and * represents a binding position with Z).] 산의 작용에 의해 현상액에 대한 용해성이 변화하는 기재 성분 (A) 및 노광에 의해 산을 발생하는 산발생제 성분 (B) 를 함유하는 레지스트 조성물로서, 상기 기재 성분 (A) 가 하기 일반식 (1) 로 나타내는 구성 단위를 갖는 폴리머를 포함하고, JPEGpat00038.jpg5531 (1) [일반식 (1) 중, Rx 는 수소 원자, 탄소수 1 ∼ 5 의 알킬기 또는 탄소수 1 ∼ 5 의 할로겐화 알킬기를 나타내고, Z 는 단결합 또는 탄소수 1 ∼ 5 의 알킬기를 나타내며, Cp 는 JPEGpat00039.jpg2115 (R2 는 제 3 급 알킬기, n 은 양의 정수이며, * 는 Z 와의 결합위치를 나타낸다.) 를 나타낸다.] 상기 산발생제 성분 (B) 가 하기 PAG(C) 로 나타나는 것을 특징으로 하는 레지스트 조성물. JPEGpat00040.jpg4366