RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

• Main Authors: KWON SOONHYUNG, CHUN MINKI, KIM SEONGJIN, CHO AHRA, BAEK JAEYEOL, KIM MINSOO, PARK HYEON, JIN HWAYOUNG, CHOI YOOJEONG, NAMGUNG RAN, SONG DAESEOK
• Format: Patent
• Language: English; Korean
• Published: 13.02.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

The invention relates to a composition for a resist underlayer film and a method for forming a pattern using the composition for a resist underlayer film, comprising: a polymer A including a heterocycle containing at least two nitrogen atoms; a compound B comprising at least a single ring, a fused ring in which two or more single rings are fused, and a non-fused ring in which two or more single rings are connected by a single bond, substituted or unsubstituted C1 to C5 alkylene group, O or C(O), wherein the single ring is a substituted or unsubstituted C6 to C30 aromatic ring or a substituted or unsubstituted C2 to C30 heteroaromatic ring, and includes at least 5 such single rings in a structural unit; and a solvent. Accordingly, the present invention can be advantageously used in forming fine patterns of photoresist using a high-energy light source. 질소 원자를 적어도 2개 포함하는 헤테로 고리를 포함하는 중합체 A; 단일 고리, 2개 이상의 단일 고리가 융합된 융합 고리, 및 2개 이상의 단일 고리가 단일 결합, 치환 또는 비치환된 C1 내지 C5 알킬렌기, O 또는 C(O)에 의해 연결된 비융합 고리 중 적어도 하나를 포함하고, 상기 단일 고리는 치환 또는 비치환된 C6 내지 C30 방향족 고리 또는 치환 또는 비치환된 C2 내지 C30 헤테로 방향족 고리이며, 구조 단위 내에 상기 단일 고리를 적어도 5개 포함하는 화합물 B; 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다.