유전체 선택성 개선을 위한 무불소 텅스텐 ALD

• Main Authors: SHEN CHENFEI, YOSHIDA NAOMI, LIN CHI CHOU, WU KEDI, SRIRAM MANDYAM, CHEN SHIH CHUNG, GANDIKOTA SRINIVAS, REN HE, FISHER ILANIT, CHEN WEN TING
• Format: Patent
• Language: Korean
• Published: 31.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

유전체 표면에 비해 전도성 표면 상에 선택적으로 금속성 텅스텐 막들을 형성하는 방법들이 설명된다. 기판은 텅스텐 금속이 없는 기판인 텅스텐-함유 막을 증착하기 위해 제1 프로세스 조건에 노출된다. 그 후, 텅스텐-함유 막은 제2 프로세스 조건에 대한 노출에 의해 금속성 텅스텐 막으로 변환된다. Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.