APPARATUS AND METHODS FOR COOLING REACTION CHAMBERS IN SEMICONDUCTOR PROCESSING SYSTEMS

• Main Authors: ESMAEILZADEHKHOSRAVIEH HAMED, SU JUNWEI, DEMOS ALEXANDROS, NAIK RUTVIJ, LIN XING
• Format: Patent
• Language: English; Korean
• Published: 05.01.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A reflector comprises a reflector body which is arranged to be overlapped with a reaction chamber of a semiconductor processing system. The reflector body comprises a surface having a groove thereon and a reflecting surface which is extended between a first longitudinal direction edge of the reflector body and a second longitudinal direction edge of the reflector body. The reflecting surface is away from the surface having a groove therein as far as a thickness of the reflecting body. The surface having a groove and the reflecting surface define a pyrometer port, two or more elongated slots and two or more shorted slots which are extended through the thickness of the reflector body. The shorted slot is superior to the elongated slot and deflects emits of coolants for the reaction chamber to the second longitudinal direction edge of the reflector body. In addition to this, explained is a method for cooling the reaction chamber while a membrane is deposited on a substrate supported in a cooling kit, a semiconductor processing system and the reaction chamber. The present disclosure generally relates to deposition of membranes on a substrate. 반사기는 반도체 처리 시스템의 반응 챔버와 중첩하도록 배열된 반사기 몸체를 포함한다. 반사기 몸체는 홈이 있는 표면, 및 반사기 몸체의 제1 길이 방향 에지와 반사기 몸체의 제2 길이 방향 에지 사이에서 연장되는 반사 표면을 가지며, 반사 표면은 반사기 몸체의 두께만큼 홈이 있는 표면으로부터 이격된다. 홈이 있는 표면 및 반사 표면은 고온계 포트, 두 개 이상의 세장형 슬롯, 및 반사기 몸체의 두께를 통해 연장되는 두 개 이상의 단축된 슬롯을 정의한다. 단축된 슬롯은 세장형 슬롯을 능가하여, 반응 챔버에 대한 냉각제의 배출을 반사기 몸체의 제2 길이 방향 에지를 향해 편향시킨다. 냉각 키트, 반도체 처리 시스템, 및 반응 챔버 내에 지지된 기판 상에 막을 증착하는 동안 반응 챔버를 냉각하는 방법이 또한 설명된다.