ASYMMETRIC SEMICONDUCTOR DEVICE INCLUDING LDD REGION AND MANUFACTURING METHOD THEREOF
A semiconductor device comprises: a substrate including an active region; a gate structure disposed in the active region; a source region and a drain region formed in the active region on both sides of the gate structure; a first LDD region surrounding one lateral surface and a bottom surface of the...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
28.12.2022
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Subjects | |
Online Access | Get full text |
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