ASYMMETRIC SEMICONDUCTOR DEVICE INCLUDING LDD REGION AND MANUFACTURING METHOD THEREOF

A semiconductor device comprises: a substrate including an active region; a gate structure disposed in the active region; a source region and a drain region formed in the active region on both sides of the gate structure; a first LDD region surrounding one lateral surface and a bottom surface of the...

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Bibliographic Details
Main Authors LEE YONG KYU, WOO JONG SUNG, JEON CHANG MIN
Format Patent
LanguageEnglish
Korean
Published 28.12.2022
Subjects
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