ORGANO TIN COMPOUND FOR THIN FILM DEPOSITION AND METHOD OF FORMING TIN CONTAINING THIN FILM USING THE SAME

• Main Authors: LEE TAE YOUNG, KIM SHIN BEOM, TAEHWAN LIM, SANGHYUN LEE, SUPILL CHUN, BAIK SUN YOUNG, DONGKYUN LEE, SIM JANG KEUN, JI SUNG JUN
• Format: Patent
• Language: English; Korean
• Published: 26.12.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to an embodiment of the present invention, the organotin compound is represented by Formula 1 below. [Formula 1] In Formula 1, L_1 and L_2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R_1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R_2 is a substituted or an unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cyclic alkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms. The present invention is to provide a method for forming thin film for depositing a high-quality thin film using a precursor composition for thin film deposition. 본 발명의 실시예에 의하면, 유기 주석 화합물은 하기 화학식 1로 표시된다. [화학식 1] JPEGpat00008.jpg3436 상기 화학식 1에서, L1 및 L2는 각각 독립적으로 탄소수 1 내지 10의 알콕시기 및 탄소수 1 내지 10의 알킬아미노기 중에서 선택되고, R1은 치환 또는 비치환된 탄소수 6 내지 8의 아릴기이고, R2는 치환 또는 비치환된 탄소수 1 내지 4의 선형 알킬기, 탄소수 3 내지 4의 분지형 알킬기, 탄소수 3 내지 6의 고리형 알킬기 및 탄소수 2 내지 4의 알릴기 중에서 선택된다.