SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

The present invention is to suppress the surface roughness of a silicon film after etching. A method includes: a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate having a silicon film formed on its surface and set at a first temperature, and...

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Bibliographic Details
Main Authors TAKAHASHI NOBUHIRO, MATSUNAGA JUNICHIRO, HORIKAWA KIYOTAKA
Format Patent
LanguageEnglish
Korean
Published 07.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention is to suppress the surface roughness of a silicon film after etching. A method includes: a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate having a silicon film formed on its surface and set at a first temperature, and modifying the surface of the silicon film to generate a reaction product; and a second step of removing the reaction product while setting the substrate at a second temperature after the first step. [과제] 에칭 후의 실리콘막의 표면의 러프니스를 억제하는 것. [해결 수단] 표면에 실리콘막이 형성되어 제 1 온도로 된 기판에, 할로겐 함유 가스 및 염기성 가스를 포함하는 처리 가스를 공급하고, 상기 실리콘막의 표면을 변질시켜서 반응 생성물을 생성시키는 제 1 공정과, 상기 제 1 공정 후에 상기 기판을 제 2 온도로 해서 상기 반응 생성물을 제거하는 제 2 공정을 실시한다.
Bibliography:Application Number: KR20220065057