LIGHT SOURCE INTEGRATED STRUCTURE OF SILICON PHOTONICS CHIP

Disclosed is a light source integration structure of a silicon photonics chip with high precision while having a simplified manufacturing process. The light source integration structure of a silicon photonics chip comprises: a silicon photonics chip having a trench structure formed through etching;...

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Bibliographic Details
Main Authors PARK GYEONG CHEOL, PARK HEUK, YOO SANGHWA
Format Patent
LanguageEnglish
Korean
Published 07.12.2022
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Summary:Disclosed is a light source integration structure of a silicon photonics chip with high precision while having a simplified manufacturing process. The light source integration structure of a silicon photonics chip comprises: a silicon photonics chip having a trench structure formed through etching; a light source disposed in the trench structure and integrated into the silicon photonics chip; and an under bump metallurgy (UBM) and a solder for flip-chip bonding the light source to the silicon photonics chip, wherein in the silicon photonics chip, a support may be formed on a plane of the trench structure to determine a vertical height of a light source disposed in the trench structure. 실리콘 포토닉스 칩의 광원 집적 구조가 개시된다. 실리콘 포토닉스 칩의 광원 집적 구조는 에칭을 통해 트렌치 구조가 형성된 실리콘 포토닉스 칩; 상기 트렌치 구조에 배치되어 상기 실리콘 포토닉스 칩에 집적되는 광원(Laser Diode, LD); 및 상기 광원을 상기 실리콘 포토닉스 칩에 플립-칩 본딩하기 위한 범핑 하지 금속(Under Bump Metallurgy, UBM) 및 솔더(Solder)를 포함하고, 상기 실리콘 포토닉스 칩은 상기 트렌치 구조에 배치되는 광원의 수직 방향 높이를 결정하기 위하여 상기 트렌치 구조의 평면 상에 지지대가 형성될 수 있다.
Bibliography:Application Number: KR20220006623