CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION

• Main Authors: WU CHIA HSUN, CHEN PO CHIH, TSAI CHUN LIN, YU JIUN LEI JERRY, CHEN HUGO, WANG YUN HSIANG
• Format: Patent
• Language: English; Korean
• Published: 28.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a crack-stop ring trench for preventing propagation of epitaxy cracks to increase yield, reliability, and performance of devices. According to a part of embodiments of the present invention, the present invention relates to a semiconductor structure. The semiconducto...