디바이스들을 제공하기 위해 화학적 증기 퇴적을 이용하여 저온들에서 스칸듐을 포함하는 필름들을 형성하는 방법들

• Main Authors: MOE CRAIG, LEATHERSICH JEFFREY M
• Format: Patent
• Language: Korean
• Published: 14.11.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRONIC CIRCUITRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; RESONATORS; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

필름을 형성하는 방법은, 기판을 포함하는 CVD 반응기 챔버를 섭씨 약 750도 내지 섭씨 약 950도의 온도 범위로 가열하는 단계, Al을 포함하는 제1 전구체를 상기 온도 범위에서 CVD 반응기 챔버에 제공하는 단계, Sc를 포함하는 제2 전구체를 상기 온도 범위에서 CVD 반응기 챔버에 제공하는 단계, 질소를 포함하는 제3 전구체를 상기 온도 범위에서 CVD 반응기 챔버에 제공하는 단계, 및 ScAlN을 포함하는 필름을 기판 상에 형성하는 단계를 포함할 수 있다. A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising A1 to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising Sc AIN on the substrate.