Composition for removing photoresist and methods of manufacturing semiconductor device and semiconductor package

A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. In order to manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removi...

Full description

Saved in:
Bibliographic Details
Main Authors YUN HYO JIN, KIM SEUNG WON, PARK WOO JUNG, BAE JIN HYE, HAN HOON, YANG CHEOL MO, SHIN HYUN SEOP, LEE MIN TAE, CHOI YUN SEOK, KIM MOON YOUNG, KIM TAE YOUNG, KIM MOON CHANG
Format Patent
LanguageEnglish
Korean
Published 10.11.2022
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. In order to manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. In order to manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition to the photoresist pattern. A semiconductor chip may adhere to the substrate in a space between the respective conductive posts. The productivity in a semiconductor package manufacturing process using a photoresist-removing composition may be improved. 포토레지스트 박리 조성물은 극성 유기 용매, 수산화 알킬 암모늄, 하이드록시기를 포함하지 않는 지방족 아민, 및 1가 알코올을 포함한다. 반도체 소자를 제조하기 위하여, 기판 상에 포토레지스트 패턴을 형성한 후, 상기 포토레지스트 박리 조성물을 상기 포토레지스트 패턴에 인가한다. 반도체 패키지를 제조하기 위하여, 기판 상에 복수의 비아홀을 포함하는 포토레지스트 패턴을 형성하고, 한다. 상기 복수의 비아홀 내에 금속을 함유하는 복수의 도전성 포스트를 형성하고, 상기 포토레지스트 박리 조성물을 상기 포토레지스트 패턴에 인가하여 상기 포토레지스트 패턴을 제거하고, 상기 복수의 도전성 포스트 각각의 사이의 공간에서 상기 기판 상에 반도체 칩을 부착한다.
Bibliography:Application Number: KR20210057482