Metal organic chemical vapor deposition apparatus

• Main Authors: KIM BYEOUNG JO, CHOI SUNG CHUL, CHO KWANG IL, JANG JONG JIN
• Format: Patent
• Language: English; Korean
• Published: 07.11.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to an organic metal chemical vapor deposition device. More specifically, the organic metal chemical vapor deposition device maximally restrains a parasitic reaction of process gas and uniformly supplies the process gas to a center portion of a substrate support unit. The present invention comprises: a chamber storing a substrate; a heater block provided inside the chamber to enable the substrate to be mounted to be heated; a barrier lid provided to an upper portion of the heater block inside the chamber to provide a processing space, where the substrate is processed, between the heater block and the barrier lid; and a gas supply unit supplying the process gas toward the substrate on a side surface of the processing space. 본 발명은 유기금속화학기상증착장치에 대한 것으로서, 보다 상세하게는 공정가스의 기생반응을 최대한 억제하면서 공정가스를 기판지지부의 중앙부까지 균일하게 공급할 수 있는 유기금속화학기상증착장치에 대한 것이다.