SEMICONDUCTOR DEVICE WITH BUMP STRUCTURE AND METHOD OF MAKING SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate and at least one bump structure disposed on the substrate. The at least one bump structure comprises a pillar formed of a metal having lower solderability than copper or a copper alloy for a solder alloy disposed on the substrate. The solder alloy is forme...

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Main Authors TSAI CHENG HUNG, TSAO PEI HAW, CHU LI HUAN, CHANG KUO CHIN, CHEN CHEN SHIEN
Format Patent
LanguageEnglish
Korean
Published 03.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate and at least one bump structure disposed on the substrate. The at least one bump structure comprises a pillar formed of a metal having lower solderability than copper or a copper alloy for a solder alloy disposed on the substrate. The solder alloy is formed directly on and in contact with an upper surface of the metal having lower solderability than copper or a copper alloy. The pillar has a height greater than 10 μm. 반도체 디바이스는 기판 및 기판 위에 배치된 적어도 하나의 범프 구조물을 포함한다. 적어도 하나의 범프 구조물은, 기판 위에 배치된 솔더 합금에 대해 구리 또는 구리 합금보다 더 낮은 납땜성을 갖는 금속으로 형성된 필라를 포함한다. 솔더 합금이 구리 또는 구리 합금보다 더 낮은 납땜성을 갖는 금속의 상부 표면 바로 위에 형성되며 이와 접촉한다. 필라는 10 ㎛보다 더 큰 높이를 갖는다.
Bibliography:Application Number: KR20220135497