Integrated circuit devices including stacked gate structures with different dimensions

• Main Authors: SONG SEUNG HYUN, HONG BYOUNG HAK
• Format: Patent
• Language: English; Korean
• Published: 26.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate. The upper transistor may overlap the lower transistor. The upper transistor may include an upper gate structure. The lower transistor may include a lower gate structure. The upper gate structure...