SEMICONDUCTOR STRUCTURES

A semiconductor device may include: a gate structure formed on a substrate; and a source/drain layer formed on the substrate adjacent to the gate structure. The source/drain layer may include first to third epitaxial layers, each of which includes silicon-germanium (SiGe), and doped with a p-type im...

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Bibliographic Details
Main Authors KIM JIN BUM, KIM DA HYE, KIM DONG WOO, KIM SEOK HOON, JUNG SU JIN, LEE CHO EUN, LEE SANG MOON, YI JI HYE
Format Patent
LanguageEnglish
Korean
Published 27.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include: a gate structure formed on a substrate; and a source/drain layer formed on the substrate adjacent to the gate structure. The source/drain layer may include first to third epitaxial layers, each of which includes silicon-germanium (SiGe), and doped with a p-type impurity and sequentially stacked. The second epitaxial layer includes carbon (C). Each of the first and third epitaxial layers may not include carbon. 반도체 장치는 기판 상에 형성된 게이트 구조물 및 상기 게이트 구조물에 인접한 상기 기판 상에 형성된 소스/드레인 층을 포함할 수 있다. 상기 소스/드레인 층은 p형 불순물이 도핑된 실리콘-게르마늄(SiGe)을 각각 포함하고 순차적으로 적층된 제1 내지 제3 에피택시얼 층(epitaxial layer)들을 구비할 수 있으며, 상기 제2 에피택시얼 층은 탄소(C)를 포함하되, 상기 각 제1 및 제3 에피택시얼 층들은 탄소를 포함하지 않을 수 있다.
Bibliography:Application Number: KR20210035594