SUBSTRATE SUPPORT WITH INCREASING AREAL DENSITY AND CORRESPONDING METHOD OF FABRICATING

• Main Authors: RUMER MICHAEL, WOYTOWITZ PETER, BURKHART VINCENT, LEESER KARL
• Format: Patent
• Language: English; Korean
• Published: 14.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A substrate support part for a substrate processing system is provided and includes a body and mesas. The mesas are distributed over a body and extended in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that is in contact with and supports the substrate. The areal density of the mesas increases monotonically with increasing radial distance from the center of the substrate support part. 기판 프로세싱 시스템을 위한 기판 지지부가 제공되고 바디 및 메사들을 포함한다. 메사들은 바디에 걸쳐 분포되고 바디로부터 이격되는 방향으로 연장한다. 메사들은 기판을 지지하도록 구성된다. 메사들 각각은 기판과 콘택트하고 지지하는 표면 영역을 포함한다. 메사들의 면적 밀도는 기판 지지부의 중심부로부터 방사상 거리가 증가함에 따라 단조적으로 증가한다.