Magnetic tunneling junction device memory device including the smae and method of manufacturing the same

A magnetic tunnel junction device, a memory device including the magnetic tunnel junction device, and a method of manufacturing the magnetic tunnel junction device are disclosed. The disclosed magnetic tunnel junction device includes: a first magnetic layer; a second magnetic layer disposed facing t...

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Bibliographic Details
Main Authors HASE NAOKI, PARK SEONG GEON, KIM, KWANG SEOK, LEE, SEUNG JAE
Format Patent
LanguageEnglish
Korean
Published 14.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A magnetic tunnel junction device, a memory device including the magnetic tunnel junction device, and a method of manufacturing the magnetic tunnel junction device are disclosed. The disclosed magnetic tunnel junction device includes: a first magnetic layer; a second magnetic layer disposed facing the first magnetic layer; and a first oxide layer disposed between the first magnetic layer and the second magnetic layer and including a metal oxide. The metal oxide of the first oxide layer may have an oxygen-deficient composition in terms of stoichiometry. The second magnetic layer may include a magnetic material doped with a metal element. 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법이 개시된다. 개시된 자기터널접합 소자는, 제1 자성층; 상기 제1 자성층에 마주하여 배치된 제2 자성층; 및 상기 제1 자성층과 상기 제2 자성층 사이에 배치되며 금속 산화물을 포함하는 제1 산화물층;을 포함하며, 상기 제1 산화물층의 금속 산화물은 화학량론(stoichiometry)적으로 산소가 부족한 조성을 가지며, 상기 제2 자성층은 금속 원소로 도핑된 자성 물질을 포함할 수 있다.
Bibliography:Application Number: KR20210028968