SUPERJUNCTION SEMICONDUCTOR DEVICE WITH DIFFERNTIAL EFFECTIVE THICKNESS AND METHOD FOR MANUFACTURING SAME

• Main Authors: PYUN MYEONG BUM, CHO WON KOOK
• Format: Patent
• Language: English; Korean
• Published: 14.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a super junction semiconductor element (1) having a differential effective thickness structure of an epitaxial layer and a manufacturing method thereof and, more specifically, to a super junction semiconductor element (1) and a manufacturing method thereof which form thicknesses of epitaxial layers of a cell region (C) and a ring region (R) to be different so as to make a breakdown voltage of the cell region (C) lower than a breakdown voltage of the ring region (R), thereby realizing breakdown voltage characteristics of the cell region (C). 본 발명은 에피택셜층의 유효 두께 차등 구조를 가지는 슈퍼정션 반도체 소자(1) 및 제조방법에 관한 것으로, 더욱 상세하게는 셀 영역(C)과 링 영역(R)의 에피택셜층의 두께를 상이하도록 형성함으로써 셀 영역(C)의 힝복전압(Breakdown Voltage)이 링 영역(R)의 힝복전압보다 낮도록 하여, 상기 셀 영역(C) 힝복전압 특성이 발현되도록 하는 슈퍼정션 반도체 소자(1) 및 제조방법에 관한 것이다.