연마용 조성물 및 실리콘 웨이퍼의 연마 방법

• Main Author: SUGITA NORIAKI
• Format: Patent
• Language: Korean
• Published: 30.08.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

연마 후의 반도체 웨이퍼의 미소 결함 및 헤이즈를 더 저감할 수 있으며, 또한 반도체 웨이퍼를 친수화시키는 능력이 양호한 연마용 조성물을 제공한다. 연마용 조성물은, 지립과, 염기성 화합물과, 하기 일반식 (A)로 표시되는 1,2-디올 구조 단위를 갖는 비닐알코올계 수지에 비닐피롤리돈이 중합된 공중합체인 수용성 고분자를 포함한다. JPEGpct00008.jpg54135 단, R1, R2 및 R3은 각각 독립적으로 수소 원자 또는 유기기를 나타내고, X는 단결합 또는 결합쇄를 나타내며, R4, R5 및 R6은 각각 독립적으로 수소 원자 또는 유기기를 나타낸다. A polishing composition is provided that can reduce minute defects and haze on the semiconductor wafer after polishing and is highly capable of hydophilizing the semiconductor wafer. A polishing composition includes: an abrasive; a basic compound; and a water-soluble polymer, the water-soluble polymer being a copolymer with a vinyl alcohol-based resin having a 1,2-diol structural unit represented by the following general formula, (A), polymerized with vinylpyrrolidone:Here, each of R1, R2 and R3 independently indicates a hydrogen atom or an organic group, X indicates a single bond or a bonding chain, and each of R4, R5 and R6 independently indicates a hydrogen atom or an organic group.