ORGANOMETALLIC RADIATION PATTERNABLE COATINGS WITH LOW DEFECTIVITY AND CORRESPONDING METHODS

In the context of forming radiation patternable structures specifically for EUV patterning, disclosed is a wafer structure including a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of 100 nm or less and no more than about 1 defect...

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Bibliographic Details
Main Authors GATES CRAIG M, CHANG SHU HAO L, CLARK BENJAMIN L, SMIDDY DOMINICK, DOISE JAN, GIORDANO GAETANO, GENIZA MARK, DE SCHEPPER PETER
Format Patent
LanguageEnglish
Korean
Published 26.08.2022
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:In the context of forming radiation patternable structures specifically for EUV patterning, disclosed is a wafer structure including a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of 100 nm or less and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with 3 mm edge exclusion. A corresponding method for forming a low defect coating includes the steps of: spin coating a purified radiation sensitive organometallic resist solution onto a wafer by using a spin coater system including a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer; and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with 3 mm edge exclusion. An improved filtering method for particle removal from a radiation patternable organometallic resist composition is provided. 특히 EUV 패터닝을 위한 방사선 패턴화 구조를 형성하는 맥락에서, 평활한 상부 표면을 갖는 기판, 및 100 nm 이하의 평균 두께를 갖고 3 mm 가장자리 배제로 평가된 48 nm 초과의 결함 크기를 갖는 결함이 제곱센티미터당 약 1개 이하인 감방사선성 유기금속 코팅을 포함하는 웨이퍼 구조물이 기재된다. 상응하는 저 결함 코팅을 형성하는 방법은 전달 라인 및 상기 전달 라인에 연결된 전달 노즐을 포함하는 스핀 코터 시스템을 사용하여 웨이퍼 상에 정제된 감방사선성 유기금속 레지스트 용액을 스핀 코팅하여 코팅된 웨이퍼를 형성하는 단계, 및 상기 코팅된 웨이퍼를 건조하여 3 mm 가장자리 배제로 평가된 48 nm 초과의 결함 크기를 갖는 결함이 제곱센티미터당 약 1개 이하인 감방사선성 유기금속 코팅을 형성하는 단계를 포함한다. 방사선 패턴화 유기금속 레지스트 조성물로부터 입자 제거를 위한 개선된 여과 방법이 제공된다.
Bibliography:Application Number: KR20220020674