산화물 스퍼터링 타깃, 및, 산화물 스퍼터링 타깃의 제조 방법

이 산화물 스퍼터링 타깃은, 금속 성분으로서, 지르코늄, 규소 및 인듐을 함유한 산화물로 이루어지고, 산화지르코늄상 (11) 의 최대 입경이 10 ㎛ 이하로 되어 있다. An oxide sputtering target comprising, as a metal component, an oxide that contains zirconium, silicon, and indium, wherein the maximum particle size in a zirconium oxide phase (11) is set to 10 µm or less...

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Bibliographic Details
Main Authors UMEMOTO KEITA, MUTSUDA YUYA
Format Patent
LanguageKorean
Published 05.08.2022
Subjects
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TREATMENT OF NATURAL STONE
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Summary:이 산화물 스퍼터링 타깃은, 금속 성분으로서, 지르코늄, 규소 및 인듐을 함유한 산화물로 이루어지고, 산화지르코늄상 (11) 의 최대 입경이 10 ㎛ 이하로 되어 있다. An oxide sputtering target comprising, as a metal component, an oxide that contains zirconium, silicon, and indium, wherein the maximum particle size in a zirconium oxide phase (11) is set to 10 µm or less.
Bibliography:Application Number: KR20227009902