METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUBSTRATE PROCESSING METHOD SUBSTRATE PROCESSING APPARATUS AND PROGRAM

• Main Authors: FUJI TOMOKI, HASHIMOTO YOSHITOMO, YAMASHITA HIROKI
• Format: Patent
• Language: English; Korean
• Published: 05.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a technique capable of forming a high-quality film at a high film formation rate in a concave part provided on the surface of a substrate. A manufacturing method of a semiconductor device comprises: (a) a process of supplying a raw material to a substrate having a concave part on the surface thereof; (b) a process of supplying a nitrogen-containing reactant to the substrate; and (c) a process of forming a film in the concave part by performing a cycle of asynchronously performing a process of supplying an oxygen-containing reactant to the substrate a prescribed number of times. In (c), an oxidation layer is formed by oxidizing a layer formed in the concave part until performing (c), and the amount of oxidation of the oxidation layer formed on an upper portion in the concave part is larger than the amount of oxidation of the oxidation layer formed on a lower portion in the concave part. 본 발명은, 기판의 표면에 마련된 오목부 내에, 고품질의 막을 높은 성막 레이트로 형성하는 것이 가능한 기술을 제공한다. (a) 표면에 오목부가 마련된 기판에 대하여 원료를 공급하는 공정과, (b) 상기 기판에 대하여 질소 함유 반응체를 공급하는 공정과, (c) 상기 기판에 대하여 산소 함유 반응체를 공급하는 공정을 비동시에 행하는 사이클을 소정 횟수 행함으로써, 상기 오목부 내에 막을 형성하는 공정을 갖고, (c)에서는, (c)를 행하기 전까지 상기 오목부 내에 형성된 층을 산화시켜서 산화층을 형성하고, 상기 오목부 내의 상부에 형성되는 상기 산화층의 산화량을, 상기 오목부 내의 하부에 형성되는 상기 산화층의 산화량보다도 많게 한다.