SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Embodiments of the present invention provide a hybrid memory having both a volatile memory and a non-volatile memory on one substrate so as to reduce manufacturing costs while increasing the operating speed of a semiconductor device, and a manufacturing method of the hybrid memory. The hybrid memory...

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Bibliographic Details
Main Authors KIM NAM KUK, LEE KUN YOUNG
Format Patent
LanguageEnglish
Korean
Published 12.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the present invention provide a hybrid memory having both a volatile memory and a non-volatile memory on one substrate so as to reduce manufacturing costs while increasing the operating speed of a semiconductor device, and a manufacturing method of the hybrid memory. The hybrid memory according to an embodiment of the present invention includes: a substrate including a cell area and a peripheral circuit area; a non-volatile memory comprising an alternating stack in which a plurality of insulating layers and a plurality of horizontal word lines are alternately stacked on the upper part of the substrate; and a volatile memory including a capacitor penetrating the alternating stack. 본 발명의 실시예들은 반도체장치의 동작속도를 증가시키면서 제조비용을 절감할 수 있도록, 하나의 기판 상에 휘발성 메모리와 비휘발성 메모리를 모두 구비하는 하이브리드 메모리 및 하이브리드 메모리 제조방법을 제공한다. 본 발명의 실시예에 따른 하이브리드 메모리는 셀영역과 주변회로영역을 포함하는 기판, 기판 상부에 복수의 절연층과 복수의 수평형 워드라인이 교번하여 적층된 교번스택을 포함하는 비휘발성메모리 및 교번스택을 관통하는 캐패시터를 포함하는 휘발성메모리를 포함할 수 있다.
Bibliography:Application Number: KR20210000902