고저항 투명막

• Main Authors: MORI RIE, YAMAGUCHI GO, KONDO YUICHI, KAWAMURA SHIORI
• Format: Patent
• Language: Korean
• Published: 07.07.2022
• Subjects: CALCULATING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPUTING; COUNTING; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DIGITAL DATA PROCESSING; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

이 고저항 투명막 (20) 은, 투명 기판 (12) 상에 형성되고, 금속 성분으로서 In, Zr, 및 Si 를 포함하는 산화물로 이루어지고, X 선 광 전자 분광 분석에 있어서, 고저항 투명막 (20) 의 표층 (22) 의 In3d5/2 의 결합 에너지의 피크 위치보다 0.5 eV 이상 고에너지측에 In3d5/2 의 결합 에너지의 피크 위치를 갖는 피크 시프트층 (21) 을, 투명 기판 (12) 측에 가지며, 피크 시프트층 (21) 의 SiO2 환산 막두께가 6.5 ㎚ 이하이다. This high-resistance transparent film (20) comprises an oxide that is formed on a transparent substrate (12) and that contains In, Zr, and Si as metal components. A peak shift layer (21) for which the peak position of binding energy of In3d5/2 is at least 0.5 eV farther toward the high-energy side than the peak position of binding energy of In3d 5/2 in a surface layer (22) of the high-resistance transparent film (20), in X-ray photoelectron spectrometry, is provided on the transparent-substrate (12) side of the high-resistance transparent film (20), and the film thickness of the peak shift layer (21) in terms of SiO2 is 6.5 nm or less.