TREATMENT APPARATUS OF SEMICONDUCTOR PROCESS GAS AND PROCESS OF SEMICONDUCTOR PROCESS GAS

• Main Authors: KO YOUNG DUK, YOOK SUN WOO, BAE JONG YONG, LEE JIHN KOO, MAENG SEO YOUNG, GIM SU JI, ROH YOUNG SEOK, PYEON JUNG JOON, HWANG JONG HA
• Format: Patent
• Language: English; Korean
• Published: 07.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SEMICONDUCTOR DEVICES; SEPARATION; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

The present invention relates to a semiconductor process gas treatment apparatus and a semiconductor process gas treatment method, which are capable of suppressing the generation of the byproduct. According to an embodiment of the present invention, the semiconductor process gas treatment apparatus comprises: a gas inlet through which gas to be treated is introduced; a space speed control unit extended from the gas inlet in a diagonal direction of the gas inlet; a catalyst reaction unit including a catalyst agent and making the gas to be treated come in contact with the catalyst agent; a differential pressure buffering unit placed between the space speed control unit and the catalyst reaction unit and including a filter; and a catalyst reactor including a gas outlet discharging a material generated as the gas to be treated comes in contact with the catalyst agent to the outside. According to an embodiment of the present invention, the semiconductor process gas treatment method comprises: a step of performing a semiconductor process on a semiconductor wafer in a process chamber; a step of discharging the remaining semiconductor gas after the previous step to the outside of the process chamber; a step of injecting the semiconductor process gas into the catalyst reactor including the catalyst agent; a step of dispersing the semiconductor process gas in the catalyst reactor; a step of reducing the differential pressure of the semiconductor process gas; a step of catalyst reaction, in which the gas causing the generation of a powder-type byproduct included in the semiconductor process gas comes in contact with the catalyst agent and makes an oxidation-reduction reaction; and a step of discharging the material generated as the gas causing the generation of the powder-type byproduct made the oxidation-reduction reaction by the catalyst agent to the outside of the catalyst reactor. 본 발명의 실시예에 따른 반도체 공정 가스 처리 장치는, 처리 대상 가스가 유입되는 가스 유입구, 상기 가스 유입구로부터 상기 가스 유입구의 사선 방향으로 연장되는 공간 속도 제어부, 촉매제를 포함하며, 상기 처리 대상 가스를 상기 촉매제와 접촉시키는 촉매 반응부, 상기 공간 속도 제어부 및 상기 촉매 반응부 사이에 배치되며, 필터를 포함하는 차압 완충부, 및 상기 처리 대상 가스가 상기 촉매제와 접촉하여 생성된 생성물을 외부로 배출하는 가스 배출구를 포함하는 촉매 반응기를 포함한다. 본 발명의 실시예에 따른 반도체 공정 가스 처리 방법은, 공정 챔버 내에서 반도체 웨이퍼 상에 반도체 공정을 수행하는 단계, 상기 반도체 공정 단계 이후 잔존하는 반도체 공정 가스를 공정 챔버 외부로 배출하는 단계, 촉매제를 포함하는 촉매 반응기 내부에 상기 반도체 공정 가스를 주입하는 단계, 상기 반도체 공정 가스가 상기 촉매 반응기 내부에 분산되는 단계, 상기 반도체 공정 가스의 차압이 감소하는 단계, 상기 반도체 공정 가스에 포함된 파우더형 부산물의 생성의 원인이 되는 가스가 상기 촉매제와 접촉하여 산화-환원 반응하는 촉매 반응 단계, 및 상기 파우더형 부산물의 생성의 원인이 되는 가스가 상기 촉매제에 의한 산화-환원 반응을 하여 생성된 생성물을 상기 촉매 반응기의 외부로 배출하는 단계를 포함한다.