APPARATUS AND MEHTOD FOR TREATING A SUBSTRATE
The present invention provides a substrate processing device. In one example, the substrate processing device includes: a process chamber having a processing space therein; a support unit positioned within the processing space and supporting the substrate; a heating unit provided to heat the substra...
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Format | Patent |
Language | English Korean |
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07.07.2022
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Abstract | The present invention provides a substrate processing device. In one example, the substrate processing device includes: a process chamber having a processing space therein; a support unit positioned within the processing space and supporting the substrate; a heating unit provided to heat the substrate placed on the support unit; a gas supply unit supplying gas to the processing space; and an exhaust unit exhausting the processing space. The gas supply unit includes a first supply unit supplying gas at a first flow rate through a first supply pipe, and a second supply unit supplying gas at a second flow rate through a second supply pipe.
본 발명은 기판 처리 장치를 제공한다. 일 예에서, 기판 처리 장치는, 내부에 처리 공간을 가지는 공정 챔버와; 처리 공간 내에 위치하며 기판을 지지하는 지지 유닛과; 지지 유닛에 놓인 기판을 가열하도록 제공된 가열 유닛과; 처리 공간으로 가스를 공급하는 가스 공급 유닛; 그리고, 처리 공간을 배기하는 배기 유닛을 포함하고, 가스 공급 유닛은, 제1공급관을 통해 가스를 제1유량으로 공급하는 제1공급 유닛과; 제2공급관을 통해 가스를 제2유량으로 공급하는 제2공급 유닛을 가질 수 있다. |
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AbstractList | The present invention provides a substrate processing device. In one example, the substrate processing device includes: a process chamber having a processing space therein; a support unit positioned within the processing space and supporting the substrate; a heating unit provided to heat the substrate placed on the support unit; a gas supply unit supplying gas to the processing space; and an exhaust unit exhausting the processing space. The gas supply unit includes a first supply unit supplying gas at a first flow rate through a first supply pipe, and a second supply unit supplying gas at a second flow rate through a second supply pipe.
본 발명은 기판 처리 장치를 제공한다. 일 예에서, 기판 처리 장치는, 내부에 처리 공간을 가지는 공정 챔버와; 처리 공간 내에 위치하며 기판을 지지하는 지지 유닛과; 지지 유닛에 놓인 기판을 가열하도록 제공된 가열 유닛과; 처리 공간으로 가스를 공급하는 가스 공급 유닛; 그리고, 처리 공간을 배기하는 배기 유닛을 포함하고, 가스 공급 유닛은, 제1공급관을 통해 가스를 제1유량으로 공급하는 제1공급 유닛과; 제2공급관을 통해 가스를 제2유량으로 공급하는 제2공급 유닛을 가질 수 있다. |
Author | LEE SANG HOON EUM KI SANG KIM JUN HO JUNG SUN WOOK SHIN KYUNG SIK |
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DocumentTitleAlternate | 기판 처리 장치 및 기판 처리 방법 |
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Snippet | The present invention provides a substrate processing device. In one example, the substrate processing device includes: a process chamber having a processing... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
Title | APPARATUS AND MEHTOD FOR TREATING A SUBSTRATE |
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