METHOD FOR SEMI-INSULATING SIC SINGLE CRYSTAL GROWTH
본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다.
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English Korean |
| Published |
29.06.2022
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| Subjects | |
| Online Access | Get full text |
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| Abstract | 본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다. |
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| AbstractList | 본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다. |
| Author | EUN TAI HEE KIM JANG YUL YEO IM GYU CHUN MYONG CHUEL LEE SEUNG SEOK SEO HAN SEOK |
| Author_xml | – fullname: SEO HAN SEOK – fullname: KIM JANG YUL – fullname: EUN TAI HEE – fullname: CHUN MYONG CHUEL – fullname: YEO IM GYU – fullname: LEE SEUNG SEOK |
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| DocumentTitleAlternate | 반절연 탄화규소 단결정 성장 방법 |
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| Snippet | 본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다. |
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| SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| Title | METHOD FOR SEMI-INSULATING SIC SINGLE CRYSTAL GROWTH |
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