METHOD FOR SEMI-INSULATING SIC SINGLE CRYSTAL GROWTH

본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다.

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Bibliographic Details
Main Authors SEO HAN SEOK, KIM JANG YUL, EUN TAI HEE, CHUN MYONG CHUEL, YEO IM GYU, LEE SEUNG SEOK
Format Patent
LanguageEnglish
Korean
Published 29.06.2022
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:본 개시는 탄화규소 단결정 성장시 C/Si 몰비를 제어하여 원료 물질을 장입하여 고품질의 탄화규소 단결정을 성장시키는 방법에 관한 것이다.
Bibliography:Application Number: KR20200179364