NOVEL COMPOUNDS PRECURSOR COMPOSITION INCLUDING THE SAME AND PREPARING METHOD OF THIN FILM USING THE SAME

• Main Authors: NIM MIN HYUK, KIM HYO SUK, PARK MIN SUNG, PARK JUNG WOO, SEOK JANG HYEON
• Format: Patent
• Language: English; Korean
• Published: 28.06.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 기상 증착을 통하여 박막 증착이 가능한 기상 증착 화합물에 관한 것으로, 구체적으로는 원자층 증착법 (Atomic Layer Deposition, ALD) 또는 화학 기상 증착법 (Chemical Vapor Deposition, CVD)에 적용가능하고, 반응성, 휘발성 및 열적 안정성이 우수한 신규 화합물, 상기 신규 화합물을 포함하는 전구체 조성물, 상기 전구체 조성물을 이용한 박막의 제조방법, 및 상기 전구체 조성물로 제조된 박막에 관한 것이다. The present disclosure relates to a vapor deposition compound capable of being deposited into a thin film through vapor deposition. Specifically, the present disclosure relates to a novel compound applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility, and thermal stability, a precursor composition containing the novel compound, a method of forming a thin film using the precursor composition, and a thin film formed using the precursor composition.