FRONT END INTEGRATED CIRCUITS INCORPORATING DIFFERING SILICON-ON-INSULATOR TECHNOLOGIES

• Main Authors: WANG HAILING, BLIN GUILLAUME ALEXANDRE, WHITEFIELD DAVID SCOTT
• Format: Patent
• Language: English; Korean
• Published: 19.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

SOI-based technology platforms which provide fully integrated front end integrated circuits (FEICs) that include switches, low-noise amplifiers (LNAs), and power amplifiers (PAs) are described. The PAs can be built in a thick film region of the integrated circuit to cause a partially depleted silico...