FRONT END INTEGRATED CIRCUITS INCORPORATING DIFFERING SILICON-ON-INSULATOR TECHNOLOGIES

SOI-based technology platforms which provide fully integrated front end integrated circuits (FEICs) that include switches, low-noise amplifiers (LNAs), and power amplifiers (PAs) are described. The PAs can be built in a thick film region of the integrated circuit to cause a partially depleted silico...

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Bibliographic Details
Main Authors WANG HAILING, BLIN GUILLAUME ALEXANDRE, WHITEFIELD DAVID SCOTT
Format Patent
LanguageEnglish
Korean
Published 19.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:SOI-based technology platforms which provide fully integrated front end integrated circuits (FEICs) that include switches, low-noise amplifiers (LNAs), and power amplifiers (PAs) are described. The PAs can be built in a thick film region of the integrated circuit to cause a partially depleted silicon-on-insulator (PDSOI) PA, and the switches and LNAs can be built in a thin film region of the integrated circuit to cause fully depleted silicon-on-insulator (FDSOI) switches and LNAs. The resulting fully integrated FEIC includes PDSOI PAs with FDSOI switches and LNAs. Passive components can be built in the thick film region, the thin film region, or both regions. 스위치들, 저잡음 증폭기들(LNA들), 및 전력 증폭기들(PA들)을 포함하는 완전 통합형 프론트 엔드 집적 회로들(FEIC들)을 제공하는 SOI 기반 기술 플랫폼들이 기술된다. PA들이 집적 회로의 후막 영역에 구축되어, 부분 공핍형 실리콘-온-인슐레이터(PDSOI) PA를 야기할 수 있고, 스위치들 및 LNA들이 집적 회로의 박막 영역에 구축되어, 완전 공핍형 실리콘-온-인슐레이터(FDSOI) 스위치들 및 LNA들을 야기할 수 있다. 결과적인 완전 통합형 FEIC는 PDSOI PA들과 함께 FDSOI 스위치들 및 LNA들을 포함한다. 후막 영역, 박막 영역, 또는 양쪽 영역들에 수동 컴포넌트들이 구축될 수 있다.
Bibliography:Application Number: KR20210155639