Semiconductor device and semiconductor apparatus comprising the same

A ferroelectric semiconductor device including ferroelectrics and having two or more electrode layers is provided. The semiconductor device may include a first electrode layer and a second electrode layer having a thermal expansion coefficient smaller than that of a ferroelectric layer. A difference...

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Bibliographic Details
Main Authors LEE, YUN SEONG, HEO, JIN SEONG, BAE, HAG YOUL, JO, SANG HYUN, NAM, SEUNG GEOL, MOON, TAE HWAN
Format Patent
LanguageEnglish
Korean
Published 11.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A ferroelectric semiconductor device including ferroelectrics and having two or more electrode layers is provided. The semiconductor device may include a first electrode layer and a second electrode layer having a thermal expansion coefficient smaller than that of a ferroelectric layer. A difference in thermal expansion coefficient between the second electrode layer and the ferroelectric may be greater than a difference in thermal expansion coefficient between the first electrode layer and the ferroelectric. The second electrode layer may have a greater thickness than the first electrode layer. 강유전(ferroelectrics)을 포함하고, 2층 이상의 전극층을 갖는 강유전 반도체 소자가 제공된다. 반도체 소자는 강유전층보다 작은 열팽창계수를 갖는 제 1 전극층과 제 2 전극층을 포함할 수 있다. 제 2 전극층과 강유전체의 열팽창계수의 차이는 제 1 전극층과 강유전체의 열팽창계수의 차이보다 클 수 있다. 제 2 전극층은 제 1 전극층보다 큰 두께를 가질 수 있다.
Bibliography:Application Number: KR20200186785